Mechanisms of the Anomalous Hall Effect


Xiaofeng Jin


Department of Physics, Fudan University


Anomalous Hall effect (AHE) is one of the most famous transport phenomenon in magnetic materials, yet its microscopic mechanism has remained controversy for more than half a century. By tuning the resistivity of Fe films at different thickness with molecular beam epitaxy, for the first time we are able to distinguish in experiment the Karplus-Luttinger intrinsic contribution or the Berry curvature term from the rest of impurity induced scattering terms, therefore singles out its dominant role in the AHE mechanisms.